Research Interest

Trusted Areas of Research (but not limited):

In this work, various memristive device configurations such as one-transistor one-resistor (1T1R), one-diode one-resistor (1D1R), and one-selector one-resistor (1S1R) are designed and studied for the in-memory and neuromorphic computation as all these configurations have unique advantages in terms of energy consumption, and fabrication process.

In this work, two novel current-voltage (I-V) characteristics are obtained in which one of the I-V responses is exactly passed through the origin (in the case of ideal memristor) while in the case of the non-ideal memristor device, the I-V responses deviate from the origin. The non-ideal memristor is also categorized under the 'memcapacitor' (memristor device with capacitive effect).

In this work, the human brain's analogous properties are emulated by utilizing a memristor device in terms of 'learning', 'forgetting' 'potentiation', 'depression', and memory transition in form of the short-term memory (STM) to long-term memory (LTM) and also build the artificial neural network (ANN) with dense memristor crossbar array devices.

In this work, memristive computational models are used to mimic the properties of the brain which are mainly based on the mechanism of the brain, rather than completely imitating the brain. Memristive devices show immense potential to build artificial brains with better efficacy as compared to other electronic devices.

The micro and nanofabrication techniques include photolithography, soft lithography, thin film deposition, an etching process, wafer bonding, molecular self-assembly, electrically induced nanopatterning, rapid prototyping, and electron, X-ray, colloidal monolayer, and focused ion beam lithography. The above-mentioned processes are key to semiconductor device fabrication.

MEMS-based capacitive transducer is a passive transducer. The working principle of the capacitive transducer is based on the changes in the capacitance due to deflection in plats/arms under the application of an external electrical field. It is used to measure physical quantities such as displacement, pressure, etc.