The “Reconfigurable Advanced Memory Devices (RAMD)” Group is led by Dr. Sanjay Kumar at the Department of Electrical Engineering, IIT Patna, Bihar, India. RAMD Group is dedicated to designing and developing two or three-terminal high-density memristive/resistive memory crossbar array devices for energy/power-efficient high-performance analog and neuromorphic computing paradigms, and their use in the “Building of the Silicon Brain”, “Synaptic Devices”, “Low-power Digital Logic Circuits”, and other potential applications. To achieve our future computing goal, the RAMD group synthesizes and develops emerging two-dimensional materials (MoS2, WS2, MoSe2, and WSe2), transition metal oxide materials (Y2O3, HfO2, Ta2O5, and HfZrO4), and their heterostructures, which play a pivotal role as a resistive switching medium in advanced neuromorphic computing devices and retinomorphic hardware.

Additionally, the RAMD Group is committed to providing novel micro/nanofabrication solutions for advanced Micro-Electro-Mechanical System (MEMS)-based resistive/capacitive sensors for gas/biochemical sensing applications with integrated lightweight portable energy storage/generation devices, including batteries, supercapacitors, and Triboelectric nanogenerators for flexible, transparent, and cost-effective electronic devices and systems.

"Man needs his difficulties because they are necessary to enjoy success." - Dr. Kalam

"Science knows no country, because knowledge belongs to humanity, and is the torch which illuminates the world." -L. Pasteur